Ռադիոֆիզիկայի ֆակուլտետ
Faculty of Radiophysics
The Faculty was established in June 1975 by decision of Armenian Government (USSR era) aiming to meet growing demand in radiophysicist in military, industrial, high technology and R&D sectors of the plan - economy.:
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Ferdinand V. Gasparyan

Professor | Chair of Semiconductor and Microelectronics
Status/Title
Doctor of Phys. Math. Sciences, Professor

Main Research Interests/ Expertise
Theory of the double injection currents in the compensated semiconductors
Ultraviolet and infrared photodiodes,
Solar cells,
Fluctuation phenomena in semiconductors

Current research interests
Bio-)Chemical sensors on the base of Electrolyte - Insulator - Semiconductor structures,
Low frequency noises in Semiconductors and Semiconductor Devices,
Low frequency noises in nanoscale structures

Educational Background
1967 - 1972 - Yerevan Polytechnic Institute, Department of Cybernetics, student,
1972 - Master of Science (Engineer of Electron Techniques) Thesis topic: “Photoelectrical Characteristics and Noises of Metal-Oxide-Semiconductor
(MOS)-transistors”, Department of Cybernetics, Yerevan Polytechnic Institute, Yerevan, Armenia,
1981 - Candidate (Physics of Semiconductors and Dielectrics) Dissertation topic: “Photoelectrical Amplification, Static, Small-Signal and Noises
Characteristics of Double Injection Structures on the Base of Compensated Semiconductors”, Institute of Physics, Baku,
National Academy of Sciences of Azerbaijan.
1995 - Doctor of Science (Solid State Physics). Dissertation topic, “Physical Phenomena in Double Injection Structures on the Base of Compensated Semiconductors”, Institute of Applied Problems of Physics, National Academy of Sciences of Armenia

Research and Work Experience
1972 - 1974 - Engineer, Research Scientist, Institute of Radiophysics and Electronics, National Academy of Sciences of Armenia, Ashtarak, Armenia,
1974 - 1978 - Post Graduate, Institute of Radiophysics and Electronics, National Academy of Sciences of Armenia, Ashtarak, Armenia,
1978 - 1986 - Senior Research Scientist, Scientific Laboratory of Semiconductor Materials and Devices, Department of Physics of Semiconductors and Dielectrics, Yerevan State University, Yerevan, Armenia,
1996 - 2000 - Head of the Chair, Yerevan State University, Idjevan Brench,
1986 - 2000 - Associate Professor, Yerevan State University, Department of Physics of Semiconductors and microelectronics, Yerevan, Armenia,
2000-till now. Full Professor, Yerevan State University, Department of Physics of Semiconductors and microelectronics, Yerevan, Armenia,
1994 - June, Trieste, Italy,
1996 - May-June, ICTP, Trieste, Italy,
2004 - June-July, Institute of Electron Structures, Heraklion, Crete, Greece,
2007 - April-May, The Gorge Washington University, Washington DC, U.S.A.,
2008 - June-August, University of Applied Sciences Aachen, Ginsterweg 1, Germany, Research Centre Juelich, Institute of Bio- and Nanosystems, Juelich, Germany
2013 - June-August, University of Applied Sciences Aachen, Ginsterweg 1, Germany, Research Centre Juelich, Institute of Bio- and Nanosystems, Juelich, Germany

Academic courses/Teaching &Training Experiences
1986-till now. Yerevan state University: Solid State Physics, Renewable Energy Sources, Crystallography, Optoelectronics, Infrared and Ultraviolet detectors, lectures.
2003 - 2005 - State Engineering University of Armenia: Crystallography.
2004 - 2006 - Russian-Armenian University: Crystallography, lecture.
2006 till now, “Synopsis-Armenia”, Optoelectronics

Awards, Honors
1975 - Award “For the Best Yang Scientist”. Institute of Radiophysics and Electronics (National Academy of Sciences of Armenia),
1977 - Award “For the Best Theoretical Work”. Institute of Radiophysics and Electronics (National Academy of Sciences of Armenia),
2006 - Armenian National Academy Award for “Organization of International Conferences “Semiconductor Micro- and Nano-Electronics”,
2010 - Gold medal of the Yerevan State University devote 35 anniversary of the Faculty of Radiophysics

Professional activities
Session Chair, “Chaos in Condensed Matters” ICTP workshop, Trieste, Italy (1995),
Session Chair, “Chaos in Condensed Matters” ICTP workshop, Trieste, Italy (1997),
Organizer and Session Chair, “Semiconductor Micro- and Nano-Electronics” International Conferences:
-1997, Dilijan, Armenia, May 1997
-1999, Dilijan, Armenia, May 1999
-2001, Sevan, Armenia, September, 2001
-2003, Tsachkadzor, Armenia, June, 2003
-2005, Agveran, Armenia, September, 2005
-2007, Tsachkadzor, Armenia, September, 2007
-2009, Tsachkadzor, Armenia, July, 2007

Membership
Member of academic council of the faculty of Radiophysics of Yerevan State university since 1995,
Chair of Expert Commission of the faculty of Radiophysics of Yerevan State university since 1995,
Expert for the journal “Proceedings of National Academy of Sciences of Armenia. Physics” since 2000,
Expert in Armenian National Scientific and Technical Thematic Financing Projects presents by the Ministry of Education and Sciences of Armenia since 2001

Language skills
Armenian - Excellent, Russian and english - Fluent

Lusine Gasparyan, Ilya Mazo, Vahan Simonyan, Ferdinand Gasparyan
Noises and Signal-to-Noise Ratio of Nanosize EIS and ISFET Biosensors
2020 | Article
Open Journal of Biophysics, 2020, 10, 1, 1-12 էջ
F. Gasparyan , N. Boichuk, S. Vitusevich
Activation–relaxation processes and related effects in quantum conductance of molecular junctions
2020 | Article
Nanotechnology, 2020, 31, 4, 045001(1-7) էջ
L. F. Gasparyan, A. Mazo, V. Simonyan, F. V. Gasparyan
EIS Biosensor for Detection of Low Concentration DNA Molecules
2020 | Article
Journal of Contemporary Physics (Armenian Academy of Sciences), 2020, 55, 1, 101-109 էջ
L.F. Gasparyan, I. A. Mazo, V. V. Simonyan, F. V. Gasparyan
Study of Molecular Junctions Metal–DNA–Metal for the DNA Sequencing
2020 | Article
Journal of Contemporary Physics (Armenian Academy of Sciences), 2020, 55, 1, 77-86 էջ
Lusine Gasparyan, Ilya Mazo, Ferdinand Gasparyan , Vahan Simonyan
DNA Sequencing Modified Method through Effective Regulation of Its Translocation Speed in Aqueous Solution
2020 | Article
Open Journal of Biophysics, 2020, 10, 2, 96-112 էջ
F. Gasparyan , L. Gasparyan, I. Mazo, V. Simonyan
ISFET Based DNA Sensor: Current-Voltage Characteristic and Sensitivity to DNA Molecules
2019 | Article
Open Journal of Biophysics, 9, 4, 239-253 pp.
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F. Gasparyan , V. Handziuk, L. Vandamme, M. Coppola, V. Sydoruk, M. Petrichuk, D. Mayer, S. Vitusevich
Transport Regimes in Tunable Gold Nanoconstructions: Proposed Solution by Low-Frequency Noise Spectroscopy
2018 | Thesis
8th International Conference on Unsolved Problems on Noise, UPON 2018. p. 85-86
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Ferdinand Gasparyan , Ihor Zadorozhny, Hrant Khondkaryan, Armen Arakelyan, Svetlana Vitusevich
Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors
2018 | Article
Nanoscale Research Letters, 2018, 13, 1, 87-95 pp.
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Ferdinand Gasparyan , Volodymyr Handziuk, Lode K J Vandamme, Maristella Coppola, Viktor Sydoruk, Mykhailo Petrychuk, Dirk Mayer, Svetlana Vitusevich
Noise spectroscopy of tunable nanoconstrictions: molecule-free and molecule-modified
2018 | Article
Nanotechnology, 2018, Vol. 29, Issue 38, 385704 (1-12) pp.
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Электрические шумы в тонких металлических проволоках
2018 | Article
Известия НАН РА. Физика (Journal of Contemporary Physics (Armenian Academy of Sciences), 2018, т. 53, №4, 501-511 էջ
Electrical Noises in Thin Metal Wires
2018 | Article
Journal of Contemporary Physics (Armenian Academy of Sciences), 2018, Vol. 53, No 4, 376–383 էջ
F. Gasparyan , I. Zadorozhnyi, H. Khondkaryan, A. Arakelyan, S. Vitusevich
Biochemical sensors based on silicon nanoribbon FETs Part 1: Samples Fabrication, CVCs, pH-sensitivity
2017 | Article
Semiconductor Micro- and Nanoelectronics. The 11th Int. Conference. 2017, p. 95-98
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F. Gasparyan , V. Handziuk, M. Coppola, V. Sudoruk, D. Mayer, S. Vitusevich
Noise Characterization of Molecular Junctions
2017 | Article
24th International Conference on Noise and Fluctuations. 2017, p. 1-4
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F. Gasparyan , I. Zadorozhnyi, H. Khondkaryan, A. Arakelyan, S. Vitusevich
Biochemical Sensors Based on Silicon Nanoribbon FETs. Part 2: Low-frequency noise and size-dependent effects
2017 | Article
Semiconductor Micro- and Nanoelectronics.The 11th Int. Conference. 2017, p. 99-103
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К теории переноса тока в механически управляемых обрывных переходах
2017 | Article
Известия НАН РА. Физика. 2017, 52,2, стр. 166-176
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F. Gasparyan , H. Khondkaryan, A. Arakelyan
Low-frequency noises of double-gated SiNW FET under irradiation
2016 | Thesis
4th International Conference "Nanotechnologies". 2016, p. 102
Hrant Khondkaryan, Armen. Arakelyan, Ferdinand Gasparyan
Optical properties of double-gated silicon nanowire FETs
2016 | Article
4th International Symposium "Optics & its applications". 2016, p. 116
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Эффект смещения края поглощения в кремниевой нанопроволоке
2016 | Article
Известия НАН РА. Физика. 2016, 51 , N4, 464-470 pp.
Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties
2016 | Article
Journal of Applied Physics. 2016, 120, 064902-(1-9)
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F. V. Gasparyan , A. H. Arakelyan, H. D. Khondkaryan
The Effect of Shifting of the Absorption Edge in the Silicon Nanowire
2016 | Article
Journal of Contemporary Physics (Armenian Academy of Sciences). 2016, 51, N4, 345-349 pp.
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Ultraviolet photodetector on the base of silicon nanowires
2015 | Article
10th Int. Conf. Semicond. Micro-. & Nanoelectronics, 2015-09-11, 37-40 pp.
UV photodetector on the base of silicon nanowire FET
2015 | Thesis
Optics & its Applications, 2015-10-01, 127 p.
F. V. Gasparyan , H. D. Khondkaryan
Low-frwquency noises and SNR of double gated Si NW ISFET based biochemical sensor
2015 | Article
10th Int. Conf. on Semicond. Micro- & Nanoelectronics, 2015-09-11, 68-71 pp.
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Низкочастотные шумы контакта металл-полупроводник
2015 | Article
Известия НАН РА. Физика, Армения, 2015թ․, 50, 228-236 стр.
Low-Frequency Noises in the Metal–Semiconductor Contact
2015 | Article
Journal of Contemporary Physics (Armenian Academy of Sciences), Armenia, 2015թ․, 50, 170–176 pp.
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Quantum modulation of the channel charge and distributed capacitance of double gated nanosize FETs
2015 | Article
Advances in Nano Research, South Korea, 2015, 3.1, 49-54 pp.
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Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current
2015 | Article
Journal of Applied Physics, USA, 2015, 117, 174506(1-5) pp.
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Статические и щумовые характеристики нанокомпозитных газовых сенсоров
2014 | Article
Известия АН Арм. ССР. Физика. – 2014 г. – Т , 5c.
Semiconductor Physics & Principles of Solid State Electronics
2011 | Book
PH YSU, Yerevan 2011, 387 pages. (In Armenian)
Modified Charge Fluctuation Noise Model for Electrolyte-Insulator-Semiconductor Devices
2011 | Article
Mod. Phys. Lett. B (MPLB), 2011, Vol. 25.
Gasparyan F. V. , Poghossian A., Vitusevich S. A., Petrychuk M. V., Sydoruk V. A., Siqueira J. R. Jr., Oliveira O. N., Offenhäusser A., Schöning M. J.
Low-Frequency Noise in Field-Effect Devices Functionalized With Dendrimer/Carbon-Nanotube Multilayers
2011 | Article
IEEE Sensors Journal, 2011, v.11, #1, 142-149
Low-frequency noise special measurement chamber
2011 | Article
Semiconductor micro -and nanoelectronics. Proc. of the Eight International Conference. Yerevan, Armenia, July 1-3 2011,p. 6
Excess Noises in (Bio-)Chemical Nanoscale Sensors
2010 | Article
Sensors & Transducers journal (ISSN 1726-5479), Vol.122, # 11, 2010, pp.72-84.
Low-Frequency Noises in Nanotubes and Nanowires
2010 | Article
Armenian Journal of Physics, 2010, vol. 3, # 4, pp. 312-341; http://ajp.asj-oa.am/306/.
Low frequency noises in semiconductors, MOS-like structures, gaz sensors and EIS based (bio-)chemical sensors
2010 | Article
Proc. on 35 Anniversary of Foundation of Dept. of Radiophysics, Yerevan State University, Yerevan, 2010, pp.53-58
Gasparyan F. , Mkhitaryan Z., Surmalyan A.
Low frequency noises of hydrogen sensors
2009 | Article
Sensors & Transducers Journal, 2009, v. 104, #5, 58-67
Gasparyan F. V. , Mkhitaryan Z. H., Surmalyan A. V.
Low frequency noises of hydrogen sensors on the base of silicon having nano-pores sensitive layer
2009 | Article
20th Int. Conf. on Noise and Fluctuation, June 14-19, 2009, Pisa, Italy, pp.137-140.
Gasparyan F. V. , Surmalyan A. V.
Surface potential behavior in ISFET-based bio-(chemical) sensors with two insulator layers in dark and under intensity-modulated irradiation
2009 | Article
Proc of 7th Int. Conf. on Semicond. Micro. & Nano-Electron., July 3-5, 2009, Tsakhcadzor, Armenia, pp. 67-70.
Modeling and Simulation of Light-Addressable potentiometric Sensors
2009 | Article
J. of Contemporary Physics (Armenian Academy of Sciences), 2010, v.45, #5, 228-237
Gasparyan F. V . , Poghossian A., Vitusevich S. A., Petrychuk M. V., Sydoruk V. A., Surmalyan A. V., Siqueira J. R. Jr., Osvaldo N., Oliveira Jr., Offenhäusser A., Schöning M. J.
1/f-noise in EIS bio-sensors functionalized with 3 layer-by-layer PAMAM/single walled carbon nanotubes
2009 | Article
Proc. 20th Int. Conf. on Noise and Fluctuation, June 14-19, 2009, Pisa, Italy, pp.133-136.
Main sources of electron mobility fluctuations in semiconductors
2007 | Article
Noise and Fluctuations in Circuits, Devices and Materials; Ed. by Massimo Macucci, Lode K. Vandamme, Carmine Ciofi, Michael B. Weissman; Proc. of SPIE v.6600, 2007, 66001K-1 - 66001K-8.
Gasparyan F. , Abrahamian Yu., Martirossyan R.
Methods and Materials for Remote Sensing. Infrared Photo-Detectors, Radiometers and Arrays
2004 | Book
2004, Kluwer Academic Publishers. Boston/Dordrecht/New York/London, 2004, 160 pages
Thermoelectric coefficient of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te
2004 | Article
Sensors and Actuators A: Physical, v. 113, N3, pp. 370-375, 2004
Thermoelectric coefficient of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te
2003 | Article
Proc. of EMRS-2003, Strasburg, France, June 10-13
A. I. Vahanyan , Yu. A. Abrahamian, V. A. Vagarshakian, F. V. Gasparian , G. G. Karamian, A. G. Sarkisian, V. I. Stafeev
Some structures for cascade solar cells
2003 | Article
Solar energy materials and Solar Cells, v.80, N4, p. 451-457, 2003
Yu. A. Abrahamian, A. I. Vahanyan , F. V. Gasparian , V. A. Vagarshakian, G. G. Karamian, S. G. Martirosian, V. I. Stafeev
High-Sensitive Multielement Line (Matrixes) on the Basis of Field-Effect Transistors With Easily Reproduced Production Technology
2002 | Article
Infr.and Mill. v.23,N12,pp1753-1764, 2002
Ю. А. Абрамян, З. Н. Адамян , В. М. Арут‏юнян , Ф. В. Гаспарян , С. Г. Мартиросян, К. Н. Кочарян
Малошумящий высокочувствительный радиометр
2001 | Article
Изв. НАН РА и ГИУА, серия Технические науки, 54, 1, 141-147, 2001
Gasparyan F. V. , Abrahamian Ju. A.
Threshold characteristics of the photodetectors, IR radiometers and main materials for modern photoelectronics
2000 | Book
PH Yerevan State University, Yerevan, 2000, 153 pages, (In Russian)
A. I. Vahanyan , Ju. A. Abrahamyan, V. M. Aroutiounian , F. V. Gasparyan , E. M. Baghiyan
Semiconductors compounds Pb1-xSnxTe<Cd> with high values of thermoemf
1999 | Article
Proc.of the II National Conf. Semiconductor microelectronics, Dilijan, Armenia, May 1999
Фотоприемник из компенсированного кремния
1990 | Article
Каталог вузовских завершенных научно-исследовательских и опытно-конструкторских разработок, подлежащих внедрению. Мин высш. и средн. спец. образования. Арм. ССР. – 1990, c. 1
Silicon Photodetectors
1989 | Book
PH Yerevan State University, 1989, 362 pages, (In Russian)
M. H. Azaryan , V. M. Harytynyan , Z. N. Adamyan , R. S. Barseghyan, F. V. Gasparyan , B. O. Semergian, Z. H. Mchitaryan, S.V.Melkonyan
Fenomena in Silicon Photodiodes Doped with Zn and S
1986 | Article
Infrared Pysics,1986, 26,5,p.267-272
Photodetectors: Past, Present, Future
1986 | Book
PH “Hayastan”, Yerevan, 1986, 231 pages, (In Armenian)
Problems of the modern microelectronics: Charge Coupled Devices
1986 | Book
PH NAS Republic of Armenia, Yerevan, 1986, 160 pages (In Armenian)
Phenomena in Silicon Photodiodes Doped with Zn and S
1986 | Article
Proceedings of the III International Conference on Infrared Physics (CIRP3). Infrared Physics. - 1986. - Vol.26, N5, p. 6
Флуктуационные явления в диодах из компенсированного кремния
1983 | Article
Тез.докл.3 Всесоюзной конф. «Флуктуационные явления в физических системах», Вилънюс,1983,с.194-196