The control of hot-carrier dynamics in graphene by external fields and by choosing of polar substrates. The improvement and practical implementation of the graphene-based hot-carrier transistor model

The project is devoted to the theoretical study of the influence of external electric and magnetic fields and the optoelectronic parameters of a substrate on the characteristics of energy relaxation of hot carriers in graphene heterostructures with the aim to reveal the possibility of optimal control of relaxation characteristics in accordance with the need for device application. Consequently, the proposed research is important from the point of view of improving both existing and planned devices in which the hot-carrier system plays a key role. The thermalization and subsequent cooling of photo-excited carriers will be examined both by taking into account the emission of various types of phonons and by taking into account the excitation of graphene-plasmons and “plasmon-surface polar optical phonon” polaritons. In addition to important estimates that can be acquired from the standpoint of application prospects, the expected theoretical results will be of fundamental importance as results obtained for the first time for various geometries and intensities of external fields. Based on the obtained results, an improved model of a graphene-based hot-carrier transistor will be developed theoretically and it will be operated as a terahertz detector.